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| inchange semiconductor product specification silicon npn power transistors 2SD2060 description ? with to-220f package ? complement to type 2sb1368 ? low collector saturation voltage: v ce(sat) =1.7v(max) at i c =3a,i b =0.3a ? collector power dissipation: p c =25w(t c =25 ?? ) applications ? with general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i b base current 0.4 a t a =25 ?? 2.0 p c collector dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2060 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 80 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =3a ;i b =0.3a 0.45 1.5 v v be base-emitter on voltage i c =3a;v ce =5v 1.0 1.5 v i cbo collector cut-off current v cb =80v; i e =0 30 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =0.5a ; v ce =5v 40 240 h fe-2 dc current gain i c =3a ; v ce =5v 15 50 f t transition frequency i c =0.5a ; v ce =5v 8.0 mhz c ob collector output capacitance f=1mhz;v cb =10v 90 pf ? h fe-1 classifications r o y 40-80 70-140 120-240 inchange semiconductor product specification 3 silicon npn power transistors 2SD2060 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon npn power transistors 2SD2060 |
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